Metal silicides have received significant attention due to their high process compatibility, low resistivity, and structural stability. In nanowire (NW)…

Here, we report the solution phase synthesis of axial heterostructure Si and Ge (hSG) nanowires (NWs). The NWs were grown…

Multiferroic topologies are an emerging solution for future low-power magnetic nanoelectronics due to their combined tuneable functionality and mobility. Here,…

This article details the analytical electron microscopy techniques that can provide atomically resolved and quantitative chemical compositional as well as…

During switching, the microstructure of a ferroelectric normally adapts to align internal dipoles with external electric fields. Favorably oriented dipolar…

Heavy reliance on extensively studied AlGaN based light emitting diodes (LEDs) to replace environmentally hazardous mercury based ultraviolet (UV) lamps…

Ferroelectric domain wall (DW) based nano-electronics is an emerging new field of research. It is only recently with advancements in…

Ge1–xSnx nanowires incorporating a large amount of Sn would be useful for mobility enhancement in nanoelectronic devices, a definitive transition…

A scalable and cost‐effective process is used to electroplate metallic Zn seeds on stainless steel substrates. Si and Ge nanowires…

Simultaneous manipulation of multiple boundary conditions in nanoscale heterostructures offers a versatile route to stabilizing unusual structures and emergent phases.…

Charged domain walls (DWs) in ferroelectric materials are an area of intense research. Microscale strain has been identified as a…

Multiferroic domain walls are an emerging solution for future low-power nanoelectronics due to their combined tuneable functionality and mobility. Here…