Dynamic charged ferroelectric domain walls (CDWs) overturn the classical idea that our electronic circuits need to consist of fixed components…

In operando failure analysis at extreme device conditions down to the atomic scale has only recently been made possible by…

Ferroelectric domain walls (DWs) are the subject of intense research at present in the search for high dielectric, gigahertz responsive…

Although the existence of a five-metal (Mo-Tc-Ru-Rh-Pd) phase – as nanoparticles observed in irradiated nuclear fuel – has been known…

A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude…

The behaviour of palladium & nickel deposited on mechanically exfoliated samples of 2D transition metal dichalcogenides (MoS2, WS2, and WSe2)…

Vanadium dioxide (VO2) is an archetypal Mott material with a metal-insulator transition (MIT) near room temperature. In thin films, this…

Ferroelectric materials, and more specifically ferroelectric domain walls (DWs) have become an area of intense research in recent years. Novel…

We have made observations of noble metal phase fission-product agglomerates and gaseous xenon within the fuel-cladding interaction (FCI) zone of…

Growing III-nitride nanowires on 2D materials is advantageous as it effectively decouples the underlying growth substrate from the properties of…

The combination of two active Li-ion materials (Ge and Sn) can result in improved conduction paths and higher capacity retention.…

Conducting nuclear materials analysis at the micron scale offers a number of advantages over the bulk scale, including: (1) access…