Lasing strip and confinement layer of InGaAs/InP heterostructure laser diode

  • Prof Ursel Bangert

Diffraction contrast image of InGaAs lasing strip and InP confinement layer, of a InGaAs/InP hetero-structure laser diode. The top image shows the lasing region before, and the bottom image after several hundred hours of operation. Discloactions have formed during use due to stress, causing failure.

Lasing strip and confinement layer of InGaAs/InP heterostructure laser diode