This article details the analytical electron microscopy techniques that can provide atomically resolved and quantitative chemical compositional as well as…

Ferroelectric domain wall (DW) based nano-electronics is an emerging new field of research. It is only recently with advancements in…

Multiferroic domain walls are an emerging solution for future low-power nanoelectronics due to their combined tuneable functionality and mobility. Here…

There has been a relentless pursuit of transverse electric (TE)-dominant deep ultraviolet (UV) optoelectronic devices for efficient surface emitters to…

Ferroelectric domain walls (DWs) are the subject of intense research at present in the search for high dielectric, gigahertz responsive…

Here we show results of ultra-low energy ion implantation of chromium into monolayer TMDCs (MoS2, MoSe2, WS2 and WSe2). Atomic…

This paper takes a fundamental view of the electron energy loss spectra of monolayer and few layer MoS2. The dielectric…

Vanadium dioxide (VO2) is an archetypal Mott material with a metal-insulator transition (MIT) near room temperature. In thin films, this…

Metallic hydride nuclear fuels (U0.17 ZrH1.6) have been under consideration for use in Light Water Reactors (LWRs) [1]. The fuel…

The dissolution of boehmite is a technical issue for Al industry because of its recalcitrant nature. In fact, a similar…

In the past few years, graphene, boron nitride and other 2D materials have stirred a research frenzy in materials science.…

Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well…