Pulsed laser thermal annealing (LTA) has been thoroughly investigated for the formation of low-resistance stanogermanide contacts on Ge0.91Sn0.09 substrates. Three…
Here, we show early stage events of the liquid phase growth of a NonSteroidal Anti-Inflammatory Drug (NSAID), flufenamic acid (FFA).…
Dynamic charged ferroelectric domain walls (CDWs) overturn the classical idea that our electronic circuits need to consist of fixed components…
Here we show results of ultra-low energy ion implantation of chromium into monolayer TMDCs (MoS2, MoSe2, WS2 and WSe2). Atomic…
In operando failure analysis at extreme device conditions down to the atomic scale has only recently been made possible by…
Ferroelectric domain walls (DWs) are the subject of intense research at present in the search for high dielectric, gigahertz responsive…
Although the existence of a five-metal (Mo-Tc-Ru-Rh-Pd) phase – as nanoparticles observed in irradiated nuclear fuel – has been known…
A domain wall‐enabled memristor is created, in thin film lithium niobate capacitors, which shows up to twelve orders of magnitude…
This paper takes a fundamental view of the electron energy loss spectra of monolayer and few layer MoS2. The dielectric…
The behaviour of palladium & nickel deposited on mechanically exfoliated samples of 2D transition metal dichalcogenides (MoS2, WS2, and WSe2)…
Vanadium dioxide (VO2) is an archetypal Mott material with a metal-insulator transition (MIT) near room temperature. In thin films, this…
Ferroelectric materials, and more specifically ferroelectric domain walls (DWs) have become an area of intense research in recent years. Novel…
